a p73t03agmt-h f advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 30v so-8 compatible with heatsink r ds(on) 9.5m low on-resistance i d 52a rohs compliant & halogen-free description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t a =25 a i d @t a =70 a i dm a p d @t c =25 w p d @t a =25 w e as single pulse avalanche energy 4 mj t stg t j symbol value unit rthj-c maximum thermal resistance, junction-case 3 /w rthj-a maximum thermal resistance, junction-ambient 3 25 /w data and specifications subject to change without notice -55 to 150 thermal data parameter total power dissipation storage temperature range operating junction temperature range 52 -55 to 150 continuous drain current 3 14.4 pulsed drain current 1 160 5 28.8 total power dissipation 41.6 parameter drain-source voltage gate-source voltage continuous drain current 3 continuous drain current (chip), v gs @ 10v 201212252 1 rating halogen-free product 30 + 20 18.1 ap73t03a series are from advanced power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. it provides the designer with an extreme efficient device for use in a wide range of power applications. the pmpak ? 5x6 ppackage is special for voltage conversion application using standard infrared reflow technique with the backside heat sink to achieve the good thermal performance. g d s s s s g pmpak ? 5 x 6 d d d d
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =20a - - 9.5 m v gs =4.5v, i d =20a - - 16 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =20a - 40 - s i dss drain-source leakage current v ds =24v, v gs =0v - - 10 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge i d =20a - 6 9.6 nc q gs gate-source charge v ds =15v - 1.5 - nc q gd gate-drain ("miller") charge v gs =4.5v - 3 - nc t d(on) turn-on delay time v ds =15v - 8 - ns t r rise time i d =1a - 9 - ns t d(off) turn-off delay time r g =3.3 -21- ns t f fall time v gs =10v - 7 - ns c iss input capacitance v gs =0v - 630 1008 pf c oss output capacitance v ds =15v - 220 - pf c rss reverse transfer capacitance f=1.0mhz - 70 - pf r g gate resistance f=1.0mhz - 3.1 6.2 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =20a, v gs =0v - - 1.2 v t rr reverse recovery time i s =10a, v gs =0 v , - 17 - ns q rr reverse recovery charge di/dt=100a/s - 10 - nc notes: 1.pulse width limited by max. junction temperature 2.pulse test 3.surface mounted on 1 in 2 copper pad of fr4 board, t < 10sec, 60 o c/w at steady state. 4.starting t j =25 o c , v dd =30v , l=0.1mh , r g =25 , i as =24a. this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 ap73t03agmt-hf
a p73t03agmt-h f fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 40 80 120 160 024681012 v ds , drain-to-source voltage (v) i d , drain current (a) 10v 7.0v 6.0v 5.0v v g = 4.0v t c =25 o c 0 20 40 60 80 100 120 0246810 v ds , drain-to-source voltage (v) i d , drain current (a) t c = 150 o c 10v 7.0v 6.0v 5.0v v g = 4.0v 4 6 8 10 12 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =20a t c =25 o c 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =20a v g =10v 0.0 0.4 0.8 1.2 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) 0 6 12 18 24 30 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c i d =1ma
ap73t03agmt-h f fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. maximum continuous drain current v.s. case temperature 4 0 2 4 6 8 10 0481216 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =20a v ds =15v 0 200 400 600 800 1000 1 5 9 1317212529 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 1 10 100 1000 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms dc operation in this area limited by r ds(on) 0 20 40 60 80 100 0123456 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v 0 20 40 60 80 25 50 75 100 125 150 t c , case temperature ( o c ) i d , drain current (a) t j =-40 o c
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